power transistor 1 publication date: june 2002 sjd00195bed 2SD1445A silicon npn epitaxial planar type for power amplification, power switching and low-voltage switching complementary to 2sb0948a (2sb948a) features ? low collector to emitter saturation voltage v ce(sat) ? high-speed switching ? satisfactory linearity of forward current transfer ratio h fe ? large collector current i c ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c note) * : rank classification 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 unit: mm 1: base 2: collector 3: emitter to-220f-a1 package parameter symbol rating unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 40 v emitter to base voltage v ebo 5v peak collector current i cp 20 a collector current i c 10 a collector power t c = 25 cp c 40 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 50 v, i e = 050 a emitter cutoff current i ebo v eb = 5 v, i c = 050 a collector to emitter voltage v ceo i c = 10 ma, i b = 040 v forward current transfer ratio h fe1 v ce = 2 v, i c = 0.1 a 45 h fe2 * v ce = 2 v, i c = 3 a 90 260 collector to emitter saturation voltage v ce(sat) i c = 10 a, i b = 0.33 a 0.6 v base to emitter saturation voltage v be(sat) i c = 10 a, i b = 0.33 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 120 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 200 pf turn-on time t on i c = 3 a, i b1 = 0.1 a, i b2 = ? 0.1 a 0.3 s storage time t stg v cc = 20 v 0.4 s fall time t f 0.1 s rank q p h fe2 90 to 180 130 to 260 ordering can be made by the common rank (pq rank h fe2 = 90 to 260) in the rank classification. note) the part number in the parenthesis shows conventional part number.
2SD1445A 2 sjd00195bed t on , t stg , t f ? i c area of safe operation (aso) v be(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c 0 0 160 40 120 80 140 20 100 60 20 60 40 80 10 50 30 70 (1) (2) (3) ambient temperature t a ( c ) collector power dissipation p c ( w ) (1) t c = t a (2) with a 100 100 2 mm al heat sink (3) without heat sink (p c = 2.0 w) t c = 25 c i b = 100 ma 90 ma 80 ma 70 ma 60 ma 50 ma 40 ma 30 ma 20 ma 10 ma collector current i c (a) collector to emitter voltage v ce (v) 01234 6 5 0 2 4 6 8 10 0.1 0.3 1 3 10 30 collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0.01 10 1 0.1 0.03 3 0.3 i c / i b = 20 t c = 100 c 25 c ? 25 c 0.1 0.3 1 3 10 30 base to emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0.01 10 1 0.1 0.03 3 0.3 i c / i b = 20 t c = 100 c 25 c ? 25 c 0.1 0.3 1 3 10 30 1 1 000 100 10 3 300 30 v ce = 10 v t c = 100 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) 0.01 10 0.1 1 0.03 0.3 3 0.1 v ce = 10 v f = 10 mhz t c = 25 c transition frequency f t ( mhz ) collector current i c ( a ) 1 10 100 0.3 3 30 300 1 000 switching time t on ,t stg ,t f ( s ) collector current i c ( a ) 0.01 0.03 0.1 0.3 1 3 10 30 100 05 4 3 2 1 pulsed t w = 1 ms duty cycle = 1% i c / i b = 30 (i b1 = ? i b2 ) v cc = 30 v t c = 25 c t stg t f t on 1 10 100 1 000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c = 25 c t = 10 ms t = 1 s i cp dc i c collector current i c ( a ) collector to emitter voltage v ce ( v )
2SD1445A 3 sjd00195bed r th(t) ? t 10 ? 2 10 ? 1 1 10 10 3 10 2 10 ? 4 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2 10 ? 3 (1) (2) (1)without heat sink (2)with a 100 100 2 mm al heat sink time t (s) thermal resistance r th(t) ( c/w)
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